MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉
MGF0911A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel
schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
17.
5
1
Unit:millimeters
FEATURES
• Class A operation • High output power P1dB=41dBm(TYP) • High power gain GLP=11dB(TYP) • High power added efficiency ηadd=40%(TYP) @2.
3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid @2.
3GHz
2
1.
0
@2.
3GHz
2 3
2-R1.
25
14.
3
9.
4
APPLICATION
UHF band power amplifiers
QUALITY GRADE
• IG
10.
0
RECOMMENDED BIAS CONDITIONS
• VDS=10V • ID=2.
6A • Rg=50Ω • Refer to Bias Procedure
1 GATE 2 SOURCE(FLANGE)
GF-21
3 DRAIN
ABSOLUTE MAXIMUM RATI...