NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns Description: The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package.
This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits.
All inputs (including program data inputs) can be directly driven by Series 74 TTL circuits without the use of external pull– up reistors, and each output can drive one Series 74 circuit without external resistors.
The data outputs are three–state for connecting mutiple devices to a common bus.
Since the NTE2532 operates from a single +5V supply (in the read mode), it is...

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