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NTE2508

Part Number	NTE2508
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Gain Bandwidth Pr...
Datasheet	NTE2508 PDF File

Overview

NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 500MHz D High Breakdown Voltage: VCEO = 120V Min D Low Reverse Transfer Capacitance and Excellent HF Response Applications: D High–Definition CRT Display Video Output D Wide–Band Amp Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO .
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120V Collector to Emitter Voltage, VCEO .
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120V Emitter to Base Voltage, VEBO .
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3V Collector Current, IC Continuous .
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300mA Peak .
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600mA Collector Dissipation, PC TA = +25°C .
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1.
3W TC = +25°C .
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8W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 80V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 50mA VCE = 10V, IC = 200mA VCE = 10V...

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