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NTE2506

NTE
Part Number NTE2506
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transisto...
Datasheet PDF File NTE2506 PDF File

NTE2506
NTE2506

Overview
NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors.
Features: D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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115V Collector–Emitter Voltage, VCEO .
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95V Collector–Emitter Voltage (RBE = 100Ω), VCER .
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110V Emitter–Base Voltage, VEBO .
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3V DC Collector Current, IC .
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400mA Total Power Dissipation (TS ≤ +85°C, Note 1), Ptot .
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5W Operating Junction Temperature, TJ .
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+175°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resistance, Junction–to–Soldering Point (TS ≤ +85°C, Note 1), RthJS .
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18K/W Note 1.
TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Symbol V(BR)CBO IC = 0.
1mA V(BR)CEO IC = 10mA V(BR)CER IC = 10mA, RBE = 100Ω Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 0.
1mA ICES ICBO DC Current Gain Transition Frequency Collector–Base Capacitance Collector Cap...


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