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NTE2503

NTE
Part Number NTE2503
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2503 Silicon NPN Transistor High Gain Switch Features: D High DC Current Gain D High Current Capacity D Low Collector...
Datasheet PDF File NTE2503 PDF File

NTE2503
NTE2503

Overview
NTE2503 Silicon NPN Transistor High Gain Switch Features: D High DC Current Gain D High Current Capacity D Low Collector–Emitter Saturation Voltage D High Emitter–Base Voltage Applications: D AF Amplifier D Various Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO .
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25V Collector–Base Voltage, VCBO .
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30V Emitter–Base Voltage, VEBO .
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15V Collector Current, IC Continuous .
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700mA Pulse .
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1.
5A Collector Dissipation, PC .
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600mW Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Test Conditions VCB = 20V, IE = 0 VEB = 10V, IC = 0 IC = 50mA, VCE = 5V IC = 500mA, VCE = 5V IC = 50mA, VCE = 10V VCB = 10V, f = 1MHz Min – – 600 – – Typ – – – 270 9 Max 0.
1 0.
1 – – – MHz pF Unit µA µA 800 1500 3200 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Collector Saturation Voltage...


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