DatasheetsPDF.com

NTE2504

Part Number	NTE2504
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	May 9, 2005
Detailed Description	NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A) D Adoption of MBIT...
Datasheet	NTE2504 PDF File

Overview

NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.
5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
30V Collector–Emitter Voltage, VCEO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
25V Emitter–Base Voltage, VEBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
15V Collector Current, IC Continuous .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2A Peak .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4A Collector Dissipation, PC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1.
2W Junction Temperature, TJ .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
+150°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 20V, IE = 0 VEB = 10V, IC = 0 VCE = 5V, IC = 500mA VCE = 10V, IC = 50mA VCE = 10V, f = 1MHz IC = 1A, IB = 20mA IC = 1A, IB = 20mA Min – – 800 – – – – 30 Typ – – ...

Similar Datasheet

NTE25 Silicon Complementary Transistors - NTE
NTE250 Silicon Complementary Transistors - NTE
NTE2501 Silicon Complementary Transistors - NTE
NTE2502 Silicon Complementary Transistors - NTE
NTE2503 Silicon NPN Transistor - NTE
NTE2504 Silicon NPN Transistor - NTE
NTE2505 Silicon NPN Transistor - NTE
NTE2506 Silicon NPN Transistor - NTE
NTE2507 Silicon NPN Transistor - NTE
NTE2508 Silicon Complementary Transistors - NTE

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)