Transistors
2SC5946
Silicon
NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
0.
33+–00.
.
0025
0.
10+–00.
.
0025
■ Features
3
0.
15 min.
0.
80±0.
05 1.
20±0.
05
• High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment
5˚
0.
15 min.
and automatic insertion through the tape packing.
■ Absolute Maximum Ratings Ta = 25°C
0.
23+–00.
.
0025
12
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05
5˚
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
30
V
pe) Collector-emitter voltage (Base open) VCEO
20
V
nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO
3
0 to 0.
01 0.
52±0.
03
V
sta tinu Collector c...