Power
Transistors
2SC5926
Silicon
NPN triple diffusion planar type
Unit: mm
4.
2±0.
2
For power amplification ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
10.
0±0.
2
1.
0±0.
2
90˚ 2.
5±0.
1
5.
0±0.
1
13.
0±0.
2
1.
2±0.
1 1.
48±0.
2
C 1.
0 2.
25±0.
2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rati...