AO4702 N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
A
Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations.
Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications).
AO4702L is a Green Product ordering option.
AO4702and AO4702L are electrically identical.
Features
VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) 16mΩ (VGS = 10V) RDS(ON) 25mΩ (VGS = 4.
5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF0.
5V@1A
D S S S G D D D D
K
G S A
SOIC-8
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