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AO4703

Alpha & Omega Semiconductors
Part Number AO4703
Manufacturer Alpha & Omega Semiconductors
Description P-Channel Enhancement Mode Field Effect Transistor
Published Jun 7, 2007
Detailed Description AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4703 uses advanc...
Datasheet PDF File AO4703 PDF File

AO4703
AO4703

Overview
AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters.
Standard Product AO4703 is Pb-free (meets ROHS & Sony 259 specifications).
AO4703L is a Green Product ordering option.
AO4703 and AO4703L are electrically identical.
A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A Features VDS (V) = -30V ID = -12A (VGS =- 20V) RDS(ON) < 14mΩ (VGS =- 20V) RDS(ON) < 15mΩ (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
5V@1A D K SOIC-8 www.
DataSheet4U.
com Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET -30 ±25 -12 -10 -60 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B 30 4.
4 3.
2 3 2.
1 -55 to 150 Typ 28 54 21 30 3 2.
1 -55 to 150 Max 40 75 30 40 75 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Maximum Junction-to-Ambient °C/W Alpha & Omega Semiconductor, Ltd.
AO4703 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V,...


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