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AO4701

Alpha & Omega Semiconductors
Part Number AO4701
Manufacturer Alpha & Omega Semiconductors
Description P-Channel Enhancement Mode Field Effect Transistor
Published Jun 7, 2007
Detailed Description July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4701 ...
Datasheet PDF File AO4701 PDF File

AO4701
AO4701

Overview
July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
Features VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V) RDS(ON) < 64mΩ (VGS = 4.
5V) RDS(ON) < 120mΩ (VGS = 2.
5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
5V@1A D K A A S G 1 2 3 4 8 7 6 5 K K D D G SOIC-8 www.
DataSheet4U.
com S A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 ±12 -5 -4.
2 -30 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 2 1.
44 -55 to 150 Typ 48 74 35 49 72 37 30 4.
4 3.
2 30 2 1.
44 -55 to 150 Max 62.
5 110 40 62.
5 110 42 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Maximum Junction-to-Ambient °C/W Alpha & Omega Semiconductor, Ltd.
AO4701 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=-5A Static Drain-Source On-Resistance TJ=125°C VGS=-4.
5V, ID=-4A VGS=-2.
5V, ID=-1A VDS=-5V, ID=-5A 54 7 83 11 -...


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