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AO4700

Alpha & Omega Semiconductors
Part Number AO4700
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jun 7, 2007
Detailed Description AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4700 uses advanc...
Datasheet PDF File AO4700 PDF File

AO4700
AO4700

Overview
AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion applications.
Standard Product AO4700 is Pb-free (meets ROHS & Sony 259 specifications).
AO4700L is a Green Product ordering option.
AO4700 and AO4700L are electrically identical.
D A A S G 1 2 3 4 8 7 6 5 K K D D Features VDS (V) = 30V ID = 6.
9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.
5V) SCHOTTKY VDS (V) = 30V, IF = 4A, VF<0.
5V@3A K G S A SOIC-8 www.
DataSheet4U.
com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B MOSFET 30 ±20 6.
9 5.
8 30 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Schottky reverse voltage Continuous Forward Current A Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A B 30 4 2.
6 2 1.
28 -55 to 150 Typ 48 74 35 44 73 31 40 2 1.
28 -55 to 150 Max 62.
5 110 40 62.
5 110 40 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W AO4700 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250 µA VGS=4.
5V, V DS=5V VGS=10V, I D=6.
9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, I D=5.
0A Forward Transconductance VDS=5V, ID=6.
9A 10 Diode Forward Voltage IS=1A Maximum...


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