AO4613 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
It is ESD protected.
Standard product AO4613 is Pb-free (meets ROHS & Sony 259 specifications).
AO4613L is a Green Product ordering option.
AO4613 and AO4613L are electrically identical
Features
n-channel p-channel VDS (V) = 30V -30V -6.
1A (V GS=10V) ID = 7.
2A (VGS=10V) RDS(ON) RDS(ON) 24m Ω (VGS=10V) 37m Ω (VGS = -10V) 40m Ω (VGS=4.
5V) 60m Ω (VGS = -4.
5V) ESD rating: 1500V (HBM)
D2 S2 ...