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AO4603

Alpha & Omega Semiconductors
Part Number AO4603
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jun 7, 2007
Detailed Description AO4603 Complementary Enhancement Mode Field Effect Transistor General Description The AO4603 uses advanced trench techno...
Datasheet PDF File AO4603 PDF File

AO4603
AO4603

Overview
AO4603 Complementary Enhancement Mode Field Effect Transistor General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications).
AO4603L is a Green Product ordering option.
AO4603 and AO4603L are electrically identical.
Features n-channel p-channel -30V VDS (V) = 30V ID = 4.
7A (VGS=10V) -5.
8A (VGS = -10V) RDS(ON) RDS(ON) < 55m Ω (VGS=10V) < 35mΩ (VGS = -10V) < 70m Ω (VGS=4.
5V) < 58mΩ (VGS = -4.
5V) < 110m Ω (VGS = 2.
5V) D2 S2 G2 S1 G1 www.
DataSheet4U.
com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Max p-channel -30 ±20 -5.
8 -4.
9 -40 2 1.
44 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±12 4.
7 4 30 2 1.
44 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 52 78 48 50 73 31 Max Units 62.
5 °C/W 110 °C/W 50 °C/W 62.
5 110 35 °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4603 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V...


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