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AO4601

Alpha & Omega Semiconductors
Part Number AO4601
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jun 7, 2007
Detailed Description AO4601 Complementary Enhancement Mode Field Effect Transistor General Description The AO4601 uses advanced trench techno...
Datasheet PDF File AO4601 PDF File

AO4601
AO4601

Overview
AO4601 Complementary Enhancement Mode Field Effect Transistor General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications).
AO4601L is a Green Product ordering option.
AO4601 and AO4601L are n-channel p-channel -30V VDS (V) = 30V ID = 4.
7A (VGS=10V) -8A (VGS = -20V) RDS(ON) RDS(ON) < 55m Ω (VGS=10V) < 18mΩ (VGS = -20V) < 70m Ω (VGS=4.
5V) < 19mΩ (VGS = -10V) < 110m Ω (VGS = 2.
5V) Features D2 S2 G2 S1 G1 www.
DataSheet4U.
com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±25 -8 -6.
9 -50 2 1.
44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±12 4.
7 4 30 2 1.
44 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 52 78 48 50 73 31 Max Units 62.
5 °C/W 110 °C/W 60 °C/W 62.
5 110 40 °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4601 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=4A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.
5V, ID=3A VGS=2.
5V, ID=2A gFS VSD IS Forward Transconductance VDS=5...


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