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AO4611

Alpha & Omega Semiconductors
Part Number AO4611
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jun 7, 2007
Detailed Description AO4611 Complementary Enhancement Mode Field Effect Transistor General Description The AO4611 uses advanced trench techno...
Datasheet PDF File AO4611 PDF File

AO4611
AO4611

Overview
AO4611 Complementary Enhancement Mode Field Effect Transistor General Description The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications).
AO4611L is a Green Product ordering option.
AO4611 and AO4611L are electrically identical.
Features n-channel VDS (V) = 60V ID = 6.
3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.
5V) p-channel -60V -4.
9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.
5V) D2 S2 G2 S1 G1 www.
DataSheet4U.
com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -4.
9 -3.
9 -30 2 1.
28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±20 6.
3 5 40 2 1.
28 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max Units 62.
5 °C/W 110 °C/W 60 °C/W 62.
5 110 40 °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4611 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=6.
3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=5.
7A Forward Transconductance VDS=5V, ID=6.
3A IS=1A,VGS=...


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