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AO4600

Alpha & Omega Semiconductors
Part Number AO4600
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jun 7, 2007
Detailed Description AO4600 Complementary Enhancement Mode Field Effect Transistor General Description The AO4600 uses advanced trench techno...
Datasheet PDF File AO4600 PDF File

AO4600
AO4600

Overview
AO4600 Complementary Enhancement Mode Field Effect Transistor General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications).
AO4600L is a Green Product ordering option.
AO4600 and AO4600L are electrically identical.
Features n-channel p-channel -30V VDS (V) = 30V ID = 6.
9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.
5V) < 50mΩ < 120mΩ (VGS = -2.
5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 www.
DataSheet4U.
com G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 30 DS VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±12 -5 -4.
2 -30 2 1.
44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 6.
9 5.
8 40 2 1.
44 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL Typ 48 74 35 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4600 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250 µA VGS=4.
5V, VDS=5V VGS=10V, ID=6.
9A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=6.
0A VGS=2.
5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 12 0.
7 25 22.
6 33 27 42 ...


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