AO4614 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications).
AO4614L is a Green Product ordering option.
AO4614 and AO4614L are electrically identical.
Features
n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) 31m Ω (VGS=10V) 45m Ω (VGS=4.
5V) p-channel -40V -5A (VGS = -10V) RDS(ON) 45mΩ (VGS = -10V) 63mΩ (VGS = -4.
5V)
D2 S2 G2 S1 G1
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D1
1 2 3 4
8 7 6 5
D2 D2 D1 D1 G2 G1 S2 S1
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