AO4615 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
It is ESD protected.
Standard product AO4615 is Pb-free (meets ROHS & Sony 259 specifications).
AO4615L is a Green Product ordering option.
AO4615 and AO4615L are electrically identical
Features
n-channel p-channel VDS (V) = 30V -30V -5.
7A (V GS=10V) ID = 7.
2A (VGS=10V) RDS(ON) RDS(ON) 24m Ω (VGS=10V) 39m Ω (VGS = -10V) 40m Ω (VGS=4.
5V) 62m Ω (VGS = -4.
5V) ESD rating: 1500V (HBM) P-chann...