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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-40 UHF power LDMOS
transistor
Preliminary specification 2001 April 05
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DataSheet4U.
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Philips Semiconductors Preliminary specification
UHF power LDMOS
transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (2.
0 to 2.
2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels.
1
BLF2022-40
PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range • Suitable for GSM, Edge, CD...