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BLF2022-40

NXP
Part Number BLF2022-40
Manufacturer NXP
Description UHF power LDMOS transistor
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary spec...
Datasheet PDF File BLF2022-40 PDF File

BLF2022-40
BLF2022-40

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 www.
DataSheet4U.
com Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (2.
0 to 2.
2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels.
1 BLF2022-40 PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range • Suitable for GSM, Edge, CDMA and WCDMA applications.
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap.
The common source is connected to the mounting flange.
Fig.
1 Simplified outline SOT608A.
2 Top view MBL290 3 QUICK REFERENCE DATA ...


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