DatasheetsPDF.com

BLF2022-70

NXP
Part Number BLF2022-70
Manufacturer NXP
Description UHF power LDMOS transistor
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor P...
Datasheet PDF File BLF2022-70 PDF File

BLF2022-70
BLF2022-70

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 www.
DataSheet4U.
com Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: – Output power = 7.
5 W (AV) – Gain = 12.
5 dB – Efficiency = 20% – ACPR = −42 dBc at 3.
84 MHz – dim = −36 dBc • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) • Internally matched for ease of use.
Top view 2 handbook, halfpage BLF2022-70 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 3 MBK394 APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)