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BLF2022-90

NXP
Part Number BLF2022-90
Manufacturer NXP
Description UHF power LDMOS transistor
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor P...
Datasheet PDF File BLF2022-90 PDF File

BLF2022-90
BLF2022-90

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 www.
DataSheet4U.
com Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: – Output power = 11.
5 W (AV) – Gain = 12.
5 dB – Efficiency = 20% – ACPR = −42 dBc at 3.
84 MHz – dim = −36 dBc • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) • Internally matched for ease of use.
Top view 2 handbook, halfpage BLF2022-90 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 3 MBK394 APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source class-AB test circuit.
MODE OF OPERATION 2-tone, class-AB W-CDMA, 3GPP test model 1, 64 channels with 66% clipping f (MHz) f1 = 2170; f2 = 2170.
1 2140 VDS (V) 28 28 IDQ (mA) 750 750 PL (W) 90 (PEP) 15 (AV) Gp (dB) 12.
8 13.
2 ηD (%) 35.
7 20 dim (dBc) −28.
5 − ACLR5 (dBc) − −40 Fig.
1 Simplified outline.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24 2 www.
DataSheet4U.
com Philips Semiconductors Product specification UHF power LDMOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage DC drain current storage temperature junction temperature PARAMETER − − − −65 − MIN.
BLF2022-90 MAX.
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