com
P Channel Enhancement Mode MOSFET -3.
4A DESCRIPTION
ST3413
The ST3413 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z -20V/-3.
4A, RDS(ON) = 95m-ohm @VGS = -4.
5V z -20V/-2.
4A, RDS(ON) = 120m-ohm ...