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ST3406

Stanson Technology
Part Number ST3406
Manufacturer Stanson Technology
Description N Channel Enhancement Mode MOSFET
Published Oct 14, 2009
Detailed Description N Channel Enhancement Mode MOSFET ST3406 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File ST3406 PDF File

ST3406
ST3406

Overview
N Channel Enhancement Mode MOSFET ST3406 5.
4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L FEATURE z z z S 2 2.
Source 3.
Drain z z 30V/5.
4A, RDS(ON) = 26mΩ(Typ.
) @VGS = 10V 30V/4.
6A, RDS(ON) = 36mΩ @VGS = 4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G 1 1.
Gate PART MARKING SOT-23-3L www.
DataSheet4U.
com 3 A6YA 1 Y: Year Code 2 A: Week Code ORDERING INFORMATION Part Number ST3406S23RG Package SOT-23-3L Part Marking A6YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com ST3406 2006.
V1 N Channel Enhancement Mode MOSFET ST3406 5.
4A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient www.
DataSheet4U.
com Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 5.
4 3.
2 25 1.
7 2.
0 1.
3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W TA=25℃ TA=70℃ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com ST3406 2006.
V1 N Channel Enhancement Mode MOSFET ST3406 5.
4A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise ...


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