DatasheetsPDF.com

ST3403

Stanson Technology
Part Number ST3403
Manufacturer Stanson Technology
Description P Channel Enchancement Mode MOSFET
Published Aug 28, 2007
Detailed Description www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST3403 The ST3403 is the P-Channel logic enh...
Datasheet PDF File ST3403 PDF File

ST3403
ST3403


Overview
www.
DataSheet4U.
com P Channel Enchancement Mode MOSFET -3.
5A DESCRIPTION ST3403 The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3 FEATURE -30V/-2.
8A, RDS(ON) = 105m-ohm @VGS = -10V -30V/-2.
5A, RDS(ON) = 115m-ohm @VGS = -4.
5V -30V/-1.
5A, RDS(ON) = 155m-ohm @VGS = -2.
5V RDS(ON) =255m-ohm @VGS = -1.
8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design D G 1 1.
Gate 2.
Source S 2 3.
Drain 3 A3YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enchancement Mode MOSFET -3.
5A ST3403 ABSOLUTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c JA Typical -30 +/-12 -3.
5 -2.
8 -20 -1.
4 1.
25 0.
81 150 -55/150 105 Unit V V A A A W ¢J ¢J ¢J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 P Channel Enchancement Mode MOSFET -3.
5A ST3403 ELECTRICAL CHARACTERISTICS ( Ta = 25¢J Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)