DatasheetsPDF.com

ST3401

Stanson Technology
Part Number ST3401
Manufacturer Stanson Technology
Description P Channel Enhancement Mode MOSFET
Published Oct 14, 2009
Detailed Description P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field ...
Datasheet PDF File ST3401 PDF File

ST3401
ST3401


Overview
P Channel Enhancement Mode MOSFET ST3401 -4.
0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L FEATURE z -30V/-4.
0A, RDS(ON) = 45mΩ (Typ.
) @VGS = -10V -30V/-3.
2A, RDS(ON) = 50mΩ @VGS = -4.
5V -30V/-1.
2A, RDS(ON) = 60mΩ @VGS = -2.
5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G 1 1.
Gate 2.
Source S 2 z 3.
Drain z z z z PART MARKING SOT-23-3L www.
DataSheet4U.
com 3 A1YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST3401S23RG Package SOT-23-3L Part Marking A1YA ※ Process Code : A ~ Z ; a ~ z ※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STP3401 2005.
V1 P Channel Enhancement Mode MOSFET ST3401 -4.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient www.
DataSheet4U.
com Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA Typical -30 ±12 -4.
0 -3.
2 -15 -1.
0 1.
25 0.
8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W TA=25℃ TA=70℃ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STP3401 2005.
V1 P Channel Enhancement Mode MOSFET ST3401 -4.
0A E...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)