Ordering number:ENN1425C
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display, Video Output Applications
Features
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.
2pF (
NPN), 1.
7pF (
PNP), VCB=30V.
· Adoption of FBET process
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
8.
0 4.
0
2.
7
1.
5 3.
0 7.
0
11.
0
1.
6 0.
8
0.
8
0.
6
3.
0
0.
5
15.
5
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Te...