DatasheetsPDF.com

C3507

Panasonic
Part Number C3507
Manufacturer Panasonic
Description 2SC3507
Published Jul 9, 2008
Detailed Description Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Uni...
Datasheet PDF File C3507 PDF File

C3507
C3507

Overview
Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.
0±0.
3 5.
0±0.
2 (0.
7) ■ Features 11.
0±0.
2 (3.
2) • High-speed switching 21.
0±0.
5 15.
0±0.
2 • High collector-base voltage (Emitter open) VCBO φ 3.
2±0.
1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.
0±0.
2 2.
0±0.
1 ■ Absolute Maximum Ratings TC = 25°C 1.
1±0.
1 0.
6±0.
2 / Parameter Symbol Rating Unit 16.
2±0.
5 (3.
5) Solder Dip e ) Collector-base voltage (Emitter open) VCBO 1 000 V c type Collector-emitter voltage (E-B short) VCES 1 000 V n d tage.
ued Collector-emitter voltage (Base open) VCEO 800 V le s ntin Emitter-base voltage (Collector open) VEBO 7 V a e cyc isco Collector current IC 5 A n u t life ed, d Base current IB 3 A duc typ Peak collector current ICP 10 A te tin r Pro ued Collector power dissipation PC 80 W fou ontin Ta = 25°C 3.
0 wing disc Junction temperature Tj 150 °C in n follo ned Storage temperature Tstg −55 to +150 °C a o includestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C c ed ce Parameter Symbol Conditions M is ntinu tenan Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.
5 A, L = 50 mH isco ain Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0 e/D e, m Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 D nanc e typ Forward current transfer ratio hFE VCE = 5 V, IC = 3 A inte anc Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.
6 A Ma inten Base-emitter saturation voltage VBE(sat) IC = 3 A, IB = 0.
6 A ma Transition frequency fT VCE = 5 V, IC = 0.
5 A, f = 1 MHz laned Turn-on time ton IC = 3 A (p Storage time tstg IB1 = 0.
6 A, IB2 = −1.
2 A 5.
45±0.
3 10.
9±0.
5 123 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Min Typ Max Unit 800 V 50 µA 50 µA 6  1.
5 V 1.
5 V 6 MHz...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)