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C3514

Part Number	C3514
Manufacturer	Inchange Semiconductor
Description	2SC3514
Published	Dec 26, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 DESCRIPTION ·High Collector-...
Datasheet	C3514 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current-Continuous 0.
1 A Collector Power Dissipation@ Ta=25℃ 1.
5 PC Collector Power Dissipation@TC=25℃ 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn Free Datasheet http://www.
datasheet4u.
com/ INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base...

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