DatasheetsPDF.com

C3515

Toshiba
Part Number C3515
Manufacturer Toshiba
Description 2SC3515
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Pl...
Datasheet PDF File C3515 PDF File

C3515
C3515

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm · High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.
5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.
) · Complementary to 2SA1384 · Small flat package · PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 300 300 6 100 20 500 1000 150 −55 to 150 Note 1: Mounted on ceramic substrate (250 mm2 × 0.
8 mmt) Unit V V V mA mA mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) 1 2002-08-13 Electrical Characteristics (...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)