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C3502

Sanyo Semicon Device
Part Number C3502
Manufacturer Sanyo Semicon Device
Description 2SC3502
Published Jan 12, 2008
Detailed Description Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display,...
Datasheet PDF File C3502 PDF File

C3502
C3502

Overview
Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.
2pF (NPN), 1.
7pF (PNP), VCB=30V.
· Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.
0 4.
0 2.
7 1.
5 3.
0 7.
0 11.
0 1.
6 0.
8 0.
8 0.
6 3.
0 0.
5 15.
5 ( ) : 2SA1380 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)150V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(...


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