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C3506


Part Number C3506
Manufacturer Panasonic
Title Silicon NPN Transistor
Description Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0...
Features 11.0±0.2 (3.2)
• High-speed switching 21.0±0.5 15.0±0.2
• High collector-base voltage (Emitter open) VCBO φ 3.2±0.1
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1
■ Absolute Maximum ...

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Datasheet C3506 PDF File








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C3502 : Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1380 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Te.

C3503 : Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. · Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions.

C3504 : Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features · High fT. · Small reverse transfer capacitance. Package Dimensions unit:mm 2006A [2SC3504] EIAJ : SC-51 B : Base C : Collector E : Emitter SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C T Tst Cs ondition Rt ating 7V 0 6V 0 4V 5A 0 1A 00 9W 00 150 –55 to +150 m m m ˚C ˚C Uni Electrical Characteris.

C3505 : ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal res.

C3507 : Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e ) Collector-base voltage (Emitter open) VCBO 1 000 V c type Collector-emitter voltage (E-B short) VCES 1 000 V n d tage. ued Collec.




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