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H7N1004AB

Part Number H7N1004AB
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-...
Datasheet H7N1004AB




Overview
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.
1.
00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ.
com • Low drive current • Available for 4.
5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 ms, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Value at Tc = 25°...






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