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H7N1004FN

Renesas Technology
Part Number H7N1004FN
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • Low on-r...
Datasheet PDF File H7N1004FN PDF File

H7N1004FN
H7N1004FN

Overview
H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.
1.
00 Oct 23, 2007 Features • Low on-resistance • RDS(on) = 25 mΩ typ.
www.
DataSheet4U.
com • Low drive current • Available for 4.
5 V gate drive Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAP EAR Note 3 Pch Note 2 Tch Tstg Note 3 Value 100 ±20 25 100 25 15 22.
5 25 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G5193-0100 Rev.
1.
00 Oct 23, 2007 Page 1 of 7 H7N1004FN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate...


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