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H7N1004LM

Renesas Technology
Part Number H7N1004LM
Manufacturer Renesas Technology
Description (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
Published Dec 27, 2006
Detailed Description www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600...
Datasheet PDF File H7N1004LM PDF File

H7N1004LM
H7N1004LM

Overview
www.
DataSheet4U.
com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) Rev.
6.
00 Aug.
27.
2003 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ.
Low drive current Available for 4.
5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1.
Gate 2.
Drain 3.
Source 4.
Drain H7N1004LD Rev.
6.
00, Aug.
27.
2003, page 1 of 11 H7N1004LD, H7N1004LS, H7N1004LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 30 100 30 15 22.
5 50 150 –55 to +150 Unit V V A A A A mJ W °C °C Pch* Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Rev.
6.
00, Aug.
27.
2003, page 2 of 11 H7N1004LD, H7N1004LS, H7N1004LM Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 V(BR)GSS ±20 IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr — — 1.
5 — — 22 — — — — — — — — — — — — Typ — — — — — 25 30 37 2800 240 140 50 9 11 23 120 70 9.
5 0.
9 47 Max — — ±10 10 2.
5 35 45 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 100 A/µs Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 1 ID = 15 A, VGS = 10 V Note 1 ID = 15 A, VGS = 4.
5 V Note 1 ID = 15 A, VGS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A RL = 2 Ω Rg = 4.
7 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source o...


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