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H7N1004AB

Renesas Technology
Part Number H7N1004AB
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-...
Datasheet PDF File H7N1004AB PDF File

H7N1004AB
H7N1004AB

Overview
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.
1.
00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ.
www.
DataSheet4U.
com • Low drive current • Available for 4.
5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 ms, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Note2 IAP Note2 EAR Pch Note3 Tch Tstg Note1 Value 100 ±20 30 100 30 15 22.
5 50 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G1579-0100 Rev.
1.
00 Sep 03, 2007 Page 1 of 7 H7N1004AB Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance www.
DataSheet4U.
com Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1.
5 — — 22 — — — — — — — — — — — — Typ — — — — — 25 30 37 2800 240 140 50 9 11 23 120 70 9.
5 0.
9 47 Max — — ±10 10 2.
5 35 45 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note4 ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.
5 V Note4 ...


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