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H7N1004DL

Renesas Technology
Part Number H7N1004DL
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features...
Datasheet PDF File H7N1004DL PDF File

H7N1004DL
H7N1004DL

Overview
H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.
1.
00 Nov 07, 2006 Features • Low on-resistance RDS(on) = 25 mΩ typ.
www.
DataSheet4U.
com • Low drive current • Available for 4.
5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S)) D 1 2 3 G 1.
Gate 2.
Drain 3.
Source H7N0607DS 1 2 3 S H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 100 ±20 25 75 75 15 22.
5 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Rev.
1.
00 Nov 07, 2006 page 1 of 8 H7N1004DL, H7N100...


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