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H7N1004FM

Renesas Technology
Part Number H7N1004FM
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug....
Datasheet PDF File H7N1004FM PDF File

H7N1004FM
H7N1004FM

Overview
H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.
1.
00 Aug.
27.
2003 www.
DataSheet4U.
com Features • • • • Low on-resistance RDS(on) = 25 mΩ typ.
Low drive current Available for 4.
5 V gate drive Outline TO-220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 Rev.
1.
00, Aug.
27.
2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.
DataSheet4U.
com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.
5 25 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Rev.
1.
00, Aug.
27.
2003, page 2 of 9 H7N1004FM Electrical Characteristics (Ta = 25°C) Item Drain t...


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