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H7N1004FN

Part Number H7N1004FN
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • Low on-r...
Datasheet H7N1004FN




Overview
H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.
1.
00 Oct 23, 2007 Features • Low on-resistance • RDS(on) = 25 mΩ typ.
com • Low drive current • Available for 4.
5 V gate drive Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VD...






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