March 2002
AO4402 N-Channel Enhancement Mode Field Effect
Transistor
General Description
com provide
Features
VDS (V) = 30V ID = 12A RDS(ON) 14mΩ (VGS = 10V) RDS(ON) 16mΩ (VGS = 4.
5V) RDS(ON) 22mΩ (VGS = 2.
5V)
The AO4402 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 ±12 12 10 80 3 2.
1 -55 to 1...