August 2002
AO4415 P-Channel Enhancement Mode Field Effect
Transistor
General Description
com provide
Features
VDS (V) = -30V ID = -8 A RDS(ON) 26mΩ (VGS = -20V) RDS(ON) 35mΩ (VGS = -10V)
The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 ±25 -8 -6.
6 -40 3 2.
1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA...