AO4418 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 11.
5A (VGS = 20V) RDS(ON) 14mΩ (VGS = 20V) RDS(ON) 17mΩ (VGS = 10V) RDS(ON) 40mΩ (VGS = 4.
5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Dra...