AO4433 P-Channel Enhancement Mode Field Effect
Transistor
General Description
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Features
VDS (V) = -30V ID = -11 A (V GS = -20V) RDS(ON) 14mΩ (VGS = -20V) RDS(ON) 18mΩ (VGS = -10V) ESD Rating: 1.
5KV HBM
The AO4433 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
The device is ESD protected.
Standard product AO4433 is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unl...