AO4470 N-Channel Enhancement Mode Field Effect
Transistor
General Description
com provide
Features
VDS (V) = 30V ID = 18A RDS(ON) 5.
5mΩ RDS(ON) 6.
2mΩ (V GS = 10V) (VGS = 10V) (VGS = 4.
5V)
The AO4470 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance.
This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.
Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications).
AO4470L is a Green Product ordering option.
AO4470 and AO4470L are electrically identical.
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherw...