AO4476 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4476/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.
This device is suitable for use as a high side switch in SMPS and general purpose applications.
AO4476 and AO4476L are electrically identical.
-RoHS Compliant -AO4476L is Halogen Free
Features
VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) 10.
5mΩ (VGS = 10V) RDS(ON) 17mΩ (VGS = 4.
5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
T...