Power
Transistors
2SD2573
www.
DataSheet4U.
com Silicon
NPN triple diffusion planar type
For high current amplification, power amplification
7.
5±0.
2
Unit: mm
4.
5±0.
2
16.
0±1.
0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 60 6 3 6 1.
5 150 −55 to +150 Unit V V V A A W °C °C
2.
5±0.
1
• Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
10.
8±0.
2
0.
65±0.
1
0.
85±0.
1 1.
0±0.
...