isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
:VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCES
Collector-Emitter Voltage
1700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
20
A
IBM
Base Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
...