N Channel Enhancement Mode MOSFET
ST3400
5.
8A
DESCRIPTION The ST3400 is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.
PIN CONFIGURATION SOT-23-3L 3 D G 1 1.
Gate 2.
Source S 2 3.
Drain FEATURE z z z z z z 30V/5.
8A, RDS(ON) = 28mΩ (Typ.
) @VGS = 10V 30V/4.
8A, RDS(ON) = 33mΩ @VGS = 4.
5V 30V/4.
0A, RDS(ON) = 40mΩ @VGS = 2.
5V Super high density cell d...