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ST3407
P Channel Enhancement Mode MOSFET
-3.
6A
DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L FEATURE � 3 D G 1 S 2 � � � � -30V/-4.
0A, RDS(ON) = 60mΩ @VGS = -10V -30V/-3.
2A, RDS(ON) = 80mΩ @VGS ...